Characterization of infrared and near-infrared absorptions of free alcoholic OH groups in hydrocarbon

We have demonstrated that the near-infrared and infrared absorptions in the 8000-3200 cm(-1) region of an OH group of 2-nonanol, 1-nonanol, etc., in n-heptane are excellently separated by subtraction without any serious interference down to very low concentrations at which OH groups are completely free. The separated sharp absorptions are assigned to the fundamental, combination, and overtone bands that are concerned with the OH stretching of free OH. Two components of a sharp overtone band around 7100 cm(-1), which are observed for primary and secondary alcohols, are assigned to coexisting internal rotational isomers of an OH group around the O-C bond. The frequencies of the OH stretching fundamental and overtone bands that are assigned to internal rotational positions are consistent for all the investigated alcohols, including methanol and tertiary butanol. Comparison of the separated spectrum of 2-nonanol in n-heptane with that in 1-chlorooctane or in carbon tetrachloride makes it clear that hydrocarbon is an inert solvent that does not disturb the intrinsic nature of an alcohol OH group. There actually exists a constant anharmonicity shift of 169-175 cm(-1) between the double frequency (2nu(OH)o) of the observed fundamental and the observed overtone frequency ([2nu(OH)]o) for free OH of various alcohols in n-heptane.     

Infrared absorption enhancement of C60 by overlaying thin silver island films

Normal-incidence infrared absorption has been observed for silver overlaid C(60) thin films formed on surface-oxidized Si(111) substrates as a function of the silver or C(60) film thickness. The absorption spectra exhibit bands at 1429 and 1180 cm(-1) due, respectively, to the infrared active T(lu) (4) and T(lu) (3) modes of C(60) in multi-layers. Additionally, two bands appear at 1442 and 1370 cm(-1). The former band is caused by activation of the infrared inactive (Raman active) A(g) (2) mode via electron transfer from the silver to adsorbed C(60), and the latter is assigned to the T(1u) (4) mode red-shifted by the charge transfer. These bands are all enhanced in intensity dependent either upon the silver or C(60) thickness, i.e., the largest absorption enhancement is obtained for 25-monolayers-thick silver and 12-nm-thick C(60). Under atomic force microprobe inspection, the average size and height of the islands in the overlaid 25-monolayers-thick silver change with underlying C(60) film thickness. The influence of the C(60) film structure upon the silver film and in turn the absorption intensity is strongly suggested.     

Pulsed laser irradiation impact on two marine diatoms Skeletonema costatum and Chaetoceros gracilis

The ability of pulsed laser irradiations to cause damage on the biofouling organisms is recently being investigated. If this technique is employed in industries such as power generation wherein a large quantity of water is being used for the cooling purpose, many organisms other than the targeted would get affected. In this study, we have investigated the damage caused by the pulsed laser irradiations from an Nd:YAG laser (fluence 0.1J/cm(2)) for varying durations such as 2, 5, 10, 30, 60 and 300 s on two marine diatom species namely Skeletonema costatum and Chaetoceros gracilis. Upon exposure to low power laser irradiations, these diatom species showed mortalities between 52.6+/-9.3% to 97.7+/-3.1% in the case of S. costatum and 57.8+/-2.5% to 98.9+/-0.6% in the case of C. gracilis for 2 and 300 s of irradiations, respectively. The mortality increased with the increase in the duration of laser irradiation. The estimation of the chlorophyll a concentration in the irradiated samples showed a considerable reduction varying between 9.8% and 57% in C. gracilis and 3% and 70.3% in S. costatum for 2 and 300 s of irradiations, respectively. The laser-survived cells grew as the non-irradiated (control) samples. C. gracilis frustules were broken by the laser whilst, the cell materials were drained out of the frustules in the case of S. costatum. The study therefore showed that the low power pulsed laser irradiations could cause significant damage on the two species of planktonic diatoms.     

Wide temperature-range Brillouin and Rayleigh optical-time-domain reflectometry in a dispersion-shifted fiber

The temperature dependences of spontaneous Brillouin and Rayleigh scattering intensities in a dispersion-shifted fiber have been measured over a wide temperature range by optical-time-domain reflectometry. It was found that spontaneous Brillouin and Rayleigh intensities normalized by room-temperature values have linear dependences on temperature, with coefficients (0.26 +/- 0.02)%/degrees C and (0.015 +/- 0.002)%/degrees C in temperature ranges -27-819 and 29-827 degrees C, respectively. Experimental results have demonstrated that both kinds of scattering can be used for distributed high-temperature measurement.     

Characterization of polymer-adhesive interfaces on a nanometre scale by elemental mapping and image EELS using EFTEM

Energy-filtering transmission electron microscopy (EFTEM) was applied for investigating interfaces between a polymer and an adhesive. The sample employed in this work is polybutylene terephtharate (PBT) sheets laminated with an epoxy adhesive. It was found that heat aging of the PBT at 180 degrees C in air for > 9 h prior to adhesion decreases the adhesion strength drastically. To investigate this unfavourable aging effect on the adhesion strength, we performed elemental mapping and image EELS using EFTEM. A weak boundary layer with a thickness of < 50 nm was visualized at the PBT-adhesive interface by elemental mapping in the sample subjected to the heat aging and image EELS revealed the origin of this layer. Thus, we clearly correlated the nanoscale interfacial structure with the adhesion strength by EFTEM.     

Cathodoluminescence study of AlGaAs/GaAs multilayers grown on ridge-type triangles on GaAs (111)A substrates

We have studied the cathodoluminescence of AlxGa1-xAs/GaAs multilayers grown on ridge-type triangles by molecular beam epitaxy. The compositional variation of Al, as well as the distribution of impurity and/or defect, was revealed by variations in the cathodoluminescence spectra and images. The Al composition in an AlxGa1-xAs layer was highest in the (111)A facet and decreased in the order (100), (411)A, (111)-delta and (110) facets. On the other hand, the carbon concentration was highest in the (411)A facet and decreased in the order (111)A, (111)-delta, (100) and (110) facets. It should be noted that the (111)-delta facet has a significant effect on the redistribution of Al. Although our ridge-type triangles are rather large for the quantum structures, these data have elucidated the self-organization mechanism of the AlxGa1-xAs/GaAs system and have yielded information on the design of quantum structures. We conclude that cathodoluminescence observation is a powerful tool for studying the compositional variation or band structure of three-dimensional microscale or nanoscale construction.     

Evaluation of counterions for electrospray ionization mass spectral analysis of a highly sulfated carbohydrate,sucrose octasulfate

A systematic approach was used to evaluate the electrospray ionization mass spectral (ESI-MS) analysis of sucrose octasulfate (SOS), an important pharmaceutical agent. SOS represents a model for other suffated carbohydrates, such as heparin and glycosaminoglycan-derived oligosaccharides that also are highly sulfated and pose difficult analytical problems. A survey of ammonium counterions showed that 1 degree, 2 degrees, and 3 degrees ammonium salts of SOS gave substantial fragmentation as a result of sulfate loss. In contrast, quaternary ammonium and phosphonium salts gave excellent ESI spectra, particularly in the positive ion mode. This represents the first report of the ESI-MS analysis of sulfated carbohydrates in the positive ion mode.     

Microassembly of semiconductor three-dimensional photonic crystals

Electronic devices and their highly integrated components formed from semiconductor crystals contain complex three-dimensional (3D) arrangements of elements and wiring. Photonic crystals, being analogous to semiconductor crystals, are expected to require a 3D structure to form successful optoelectronic devices. Here, we report a novel fabrication technology for a semiconductor 3D photonic crystal by uniting integrated circuit processing technology with micromanipulation. Four- to twenty-layered (five periods) crystals, including one with a controlled defect, for infrared wavelengths of 3-4.5 microm, were integrated at predetermined positions on a chip (structural error <50 nm). Numerical calculations revealed that a transmission peak observed at the upper frequency edge of the bandgap originated from the excitation of a resonant guided mode in the defective layers. Despite their importance, detailed discussions on the defective modes of 3D photonic crystals for such short wavelengths have not been reported before. This technology offers great potential for the production of optical wavelength photonic crystal devices.     

A 50-Gbit/s 450-mW Full-Rate 4:1 Multiplexer With Multiphase Clock Architecture in 0.13- μm InP HEMT Technology

A full-rate multiplexer (MUX) with a multiphase clock architecture for over 40 Gbit/s optical communication systems is presented. The 4:1 MUX is comprised of a re-timer based on a D-type flip-flop (DFF) and a clock tree system that uses EXOR-type delay buffers to match its skews well to those of the data. The supply voltage is reduced to -1.5 V by analyzing the voltage allocation. Fabricated in a 0.13-mum InP HEMT technology, a DFF test circuit achieved 75-Gbit/s operation and exhibited performance sufficient to re-time 50-Gbit/s serialized data. The 4:1 MUX measurement results demonstrate successful 50-Gbit/s operation at room temperature, and 40-Gbit/s operation, which has 10^-11 error free for 2³¹ - 1 pseudorandom bit stream (PRBS) data, up to an ambient temperature of 90 degrees or down to - 1.24 V of supply voltage. The circuit consumes 450 mW at a - 1.5-V supply and exhibits an output jitter of 283 fs rms at 50-Gbit/s operation. We also propose a multiphase clock generator for a MUX that has a serialization of more than four channels